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Samsung Electronics today unveiled plans for continuous process technology migration to 3- and 2-nanometer (nm) based on the company’s Gate-All-Around (GAA) transistor structure at its 5th annual Samsung Foundry Forum (SFF) 2021. With a theme of Adding One More Dimension, the multi-day virtual event is expected to draw over 2,000 global customers and partners. At this year’s event, Samsung will share its vision to bolster the company’s leadership in the rapidly evolving foundry market by taking each respective part of foundry business to the next level: process technology, manufacturing operations, and foundry services. ✓ 00:00 Samsung Electronics today unveiled plans for continuous process technology migration to 3- and 2-nanometer (nm) based on the company’s Gate-All-Around (GAA) transistor structure at its 5th annual Samsung Foundry Forum (SFF) 2021. ✓ 01:21 Samsung’s unique GAA technology, Multi-Bridge-Channel FET (MBCFETTM), is essential for continuing process migration. ✓ 02:03 Samsung is scheduled
